Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-05-13
2008-05-13
Pham, Thanhha S. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S240000, C438S287000, C438S763000, C257SE21009, C257SE21010
Reexamination Certificate
active
11027256
ABSTRACT:
A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides.
REFERENCES:
patent: 5529954 (1996-06-01), Iijima et al.
patent: 5923056 (1999-07-01), Lee et al.
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6020024 (2000-02-01), Maiti et al.
patent: 6020243 (2000-02-01), Wallace et al.
patent: 6060755 (2000-05-01), Ma et al.
patent: 6088216 (2000-07-01), Laibowitz et al.
patent: 6407435 (2002-06-01), Ma et al.
patent: 6664186 (2003-12-01), Callegari et al.
patent: 6797525 (2004-09-01), Green et al.
patent: 6841439 (2005-01-01), Anthony et al.
patent: 7030024 (2006-04-01), Ho et al.
patent: 2002/0146895 (2002-10-01), Ramdani et al.
patent: 2004/0038538 (2004-02-01), Ho et al.
patent: 2005/0062136 (2005-03-01), Senzaki
patent: 2006/0125026 (2006-06-01), Li et al.
patent: 0851473 (1998-01-01), None
patent: WO 00/01008 (2000-01-01), None
G.D. Wilk and R. M. Wallace “Electrical Properties of Hafnium Silicate Gate Dielectrics Deposited Directly on Silicon” Applied Physics Letters; pp. 2854-2856 (199).
Lee Jong-Ho
Lee Nae-In
Marger & Johnson & McCollom, P.C.
Pham Thanhha S.
Samsung Electronics Co,. Ltd.
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