Dielectric layer for semiconductor device and method of...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S240000, C438S287000, C438S763000, C257SE21009, C257SE21010

Reexamination Certificate

active

11027256

ABSTRACT:
A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides.

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