Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-05-13
2008-05-13
Pham, Thanhha S. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S240000, C438S287000, C438S763000, C257SE21009, C257SE21010
Reexamination Certificate
active
07371633
ABSTRACT:
A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides.
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Lee Jong-ho
Lee Nae-in
Marger & Johnson & McCollom, P.C.
Pham Thanhha S.
Samsung Electronics Co,. Ltd.
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