Dielectric layer for semiconductor device and method of...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S257000, C438S591000, C438S593000, C257SE21179

Reexamination Certificate

active

07902019

ABSTRACT:
A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides.

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Wilk, G. D. and Wallace, R. M., “Electrical Properties of Hafnium Silicate Gate Dielectrics Deposited Directly on Silicon,” Applied Physics Letters, vol. 74, No. 19, pp. 2854-2856, May 10, 1999.

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