Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-08
2011-03-08
Pham, Thanhha (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S257000, C438S591000, C438S593000, C257SE21179
Reexamination Certificate
active
07902019
ABSTRACT:
A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides.
REFERENCES:
patent: 5529954 (1996-06-01), Iijima et al.
patent: 5923056 (1999-07-01), Lee et al.
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6020024 (2000-02-01), Maiti et al.
patent: 6020243 (2000-02-01), Wallace et al.
patent: 6060755 (2000-05-01), Ma et al.
patent: 6088216 (2000-07-01), Laibowitz et al.
patent: 6407435 (2002-06-01), Ma et al.
patent: 6664186 (2003-12-01), Callegari et al.
patent: 6693321 (2004-02-01), Zheng et al.
patent: 6797525 (2004-09-01), Green et al.
patent: 6809370 (2004-10-01), Colombo et al.
patent: 6841439 (2005-01-01), Anthony et al.
patent: 6844604 (2005-01-01), Lee et al.
patent: 7030024 (2006-04-01), Ho et al.
patent: 2002/0146895 (2002-10-01), Ramdani et al.
patent: 2004/0038538 (2004-02-01), Ho et al.
patent: 2005/0062136 (2005-03-01), Senzaki
patent: 2006/0125026 (2006-06-01), Li et al.
patent: 1239325 (1999-12-01), None
patent: 1302080 (2001-07-01), None
patent: 1460297 (2003-12-01), None
patent: 0 851 473 (1998-01-01), None
patent: 2002-319583 (2002-10-01), None
patent: WO 00/01008 (2000-01-01), None
patent: WO 03007717 (2003-01-01), None
patent: WO 03105205 (2003-12-01), None
patent: WO 2005038929 (2005-04-01), None
Wilk, G. D. and Wallace, R. M., “Electrical Properties of Hafnium Silicate Gate Dielectrics Deposited Directly on Silicon,” Applied Physics Letters, vol. 74, No. 19, pp. 2854-2856, May 10, 1999.
Lee Jong-ho
Lee Nae-in
F. Chau & Associates LLC
Pham Thanhha
Samsung Electronics Co,. Ltd.
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