Dielectric isolation bipolar transistor

Details Dielectric isolation bipolar transistor Dielectric isolation bipolar transistor

1997-12-23

1999-10-19

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438202, 438234, 438361, 438154, H01L 218238

Patent

active

059703334

ABSTRACT:
The present invention relates to a method of forming deep trenches in a BICMOS-type integrated circuit wherein the formation of a bipolar transistor includes the steps of depositing a base polysilicon layer, depositing a protection oxide layer, forming an emitter-base opening, and etching the silicon oxide protection layer and the base polysilicon layer outside the bipolar transistor areas. The formation of the trenches includes the steps of opening the protection oxide and base polysilicon layers above a thick oxide region while the emitter-base opening is being made, etching the thick oxide layer while the protection oxide layer is being etched, and etching the silicon under the thick oxide while the base polysilicon is being etched.

REFERENCES:
patent: 4958213 (1990-09-01), Eklund et al.
patent: 5047357 (1991-09-01), Eklund
patent: 5089429 (1992-02-01), Hsu
patent: 5171702 (1992-12-01), Prengle et al.
patent: 5471083 (1995-11-01), Ikeda et al.
patent: 5547893 (1996-08-01), Sung
French Preliminary Search Report for application No. 9616337, filed Dec. 27, 1996.

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