Dielectric film and method of forming it, semiconductor...

Details Dielectric film and method of forming it, semiconductor... Dielectric film and method of forming it, semiconductor...

2001-12-27

2008-10-21

Jackson, Jr., Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S777000, C257SE21179, C257SE21302, C257SE21422, C257SE21680

Reexamination Certificate

active

07439121

ABSTRACT:
In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silicon surface to a first inert gas plasma. Thereafter a silicon compound layer is formed on the surface of the silicon gas by generating plasma while using a mixed gas of a second inert gas and one or more gaseous molecules, such that there is formed a silicon compound layer containing at least a pat of the elements constituting the gaseous molecules, on the surface of the silicon gas.

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Gerald Lucovsky, “Silicon Oxide/Silicon Nitride Dual-Layer Films: A Stacked Gate Dielectric for the 21stCentury”, Journal of Non-Crystalline Solids, (1999), pp. 26-37, vol. 254, Elsevier Science B.V.

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