Dielectric cure for reducing oxygen vacancies

Details Dielectric cure for reducing oxygen vacancies Dielectric cure for reducing oxygen vacancies

2005-02-01

2005-02-01

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S009000, C438S240000, C438S253000, C438S466000, C438S474000, C438S475000, C438S513000, C438S675000, C257S068000, C257S071000, C257S301000, C257S303000, C257S306000, C257S310000

Reexamination Certificate

active

06849494

ABSTRACT:
A unique electrochemical process fills oxygen vacancies in dielectrics while reducing oxidation of nearby electrodes and conductors. Preferably, an electromagnetic field or bias is applied to a dielectric. The bias causes oxygen vacancies in the dielectric to migrate to the surface of the dielectric. As the oxygen vacancies migrate toward the surface, oxygen ions fill the oxygen vacancies. In one embodiment, a unique plasma treatment provides the oxygen ions that react with the oxygen vacancies. In another embodiment, a unique electrolysis treatment provides the oxygen ions that react with the oxygen vacancies.

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