Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-10-02
2007-10-02
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S612000, C438S622000, C716S030000, C716S030000
Reexamination Certificate
active
11445657
ABSTRACT:
An integrated circuit has metal bumps on the top surface that create a potentially destructive stress on the underlying layers when the metal bumps are formed. Ensuring a minimum metal concentration in the underlying metal interconnect layers has been implemented to reduce the destructive effect. The minimum metal concentration is highest in the corners, next along the border not in the corner, and next is the interior. The regions in an interconnect layer generally under the metal bump require more concentration than adjacent regions not under a bump. Lesser concentration is required for the metal interconnect layers that are further from the surface of the integrated circuit. The desired metal concentration is achieved by first trying a relatively simple solution. If that is not effective, different approaches are attempted until the minimum concentration is reached or until the last approach has been attempted.
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Hess Kevin J.
Pozder Scott K.
Tian Ruiqi
Travis Edward O.
Uehling Trent S.
Cannatti Michael Rocco
Hamilton & Terrile LLP
Lebentritt Michael
Roman Angel
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