Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2008-01-22
2008-01-22
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S254000, C257S414000
Reexamination Certificate
active
10897449
ABSTRACT:
A device for manufacturing a capacitive pressure measurement includes an insulated base electrode, a mechanically deflectable counterelectrode composed of a layer made of at least one of a monocrystalline and polycrystalline semiconductor material, a contact arrangement for electrically connecting the electrodes, and at least one semiconductor component, all integrated onto a semiconductor substrate. The connection for the base electrode is formed by an electrically insulated conductive polycrystalline semiconductor layer. The method for manufactured the device includes the step of arranging a conductive polycrystalline semiconductor layer between two insulating layers on the semiconductor substrate for forming a base electrode.
REFERENCES:
patent: 5211058 (1993-05-01), Fukiura et al.
patent: 5277068 (1994-01-01), Fukiura et al.
patent: 2003/0215976 (2003-11-01), Chou et al.
patent: 2006/0014392 (2006-01-01), Benzel et al.
Fischer Frank
Laermer Franz
Metzger Lars
Trah Hans-Peter
Kenyon & Kenyon LLP
Pham Long
Robert & Bosch GmbH
LandOfFree
Device for capacitive pressure measurement and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Device for capacitive pressure measurement and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device for capacitive pressure measurement and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3929845