Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2008-01-22
2008-01-22
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S254000, C257S414000
Reexamination Certificate
active
07321156
ABSTRACT:
A device for manufacturing a capacitive pressure measurement includes an insulated base electrode, a mechanically deflectable counterelectrode composed of a layer made of at least one of a monocrystalline and polycrystalline semiconductor material, a contact arrangement for electrically connecting the electrodes, and at least one semiconductor component, all integrated onto a semiconductor substrate. The connection for the base electrode is formed by an electrically insulated conductive polycrystalline semiconductor layer. The method for manufactured the device includes the step of arranging a conductive polycrystalline semiconductor layer between two insulating layers on the semiconductor substrate for forming a base electrode.
REFERENCES:
patent: 5211058 (1993-05-01), Fukiura et al.
patent: 5277068 (1994-01-01), Fukiura et al.
patent: 2003/0215976 (2003-11-01), Chou et al.
patent: 2006/0014392 (2006-01-01), Benzel et al.
Fischer Frank
Laermer Franz
Metzger Lars
Trah Hans-Peter
Kenyon & Kenyon LLP
Pham Long
Robert & Bosch GmbH
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