Device and method generating internal voltage in...

Details Device and method generating internal voltage in... Device and method generating internal voltage in...

2011-01-04

2011-01-04

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S226000, C365S229000, C365S203000, C365S196000, C365S207000

Reexamination Certificate

active

07864599

ABSTRACT:
A semiconductor memory device and a method of generating an internal voltage in the semiconductor memory device are provided. The semiconductor memory device includes a controller configured to activate a sensing enable signal when an active command is applied from outside, inactivate the sensing enable signal when a precharge command is applied, and output the sensing enable signal, and an array internal voltage generator configured to output an active array power supply voltage as an array power supply voltage when the sensing enable signal is activated, output an external array power supply voltage and a standby array power supply voltage as the array power supply voltage when the sensing enable signal is inactivated, and output the standby array power supply voltage alone as the array power supply voltage when the sensing enable signal is inactivated for at least a specific period.

REFERENCES:
patent: 6496446 (2002-12-01), Suzuki
patent: 2006252721 (2006-09-01), None
patent: 100273274 (2000-09-01), None
patent: 1020030047013 (2003-06-01), None
patent: 1020070036633 (2007-04-01), None

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