Optics: measuring and testing – By light interference – For dimensional measurement
Reexamination Certificate
2010-01-15
2010-10-05
Lyons, Michael A (Department: 2877)
Optics: measuring and testing
By light interference
For dimensional measurement
Reexamination Certificate
active
07808651
ABSTRACT:
An endpoint detection system for detecting an endpoint of a process comprises a polychromatic light source which emits polychromatic light. The light is reflected from a substrate. A light wavelength selector receives the reflected polychromatic light and determines a wavelength of light at which a local intensity of the reflected light is maximized during the process. In one version, the wavelength selector comprises a diffraction grating to generate a plurality of light beams having different wavelengths from the reflected polychromatic light and a light detector to receive the light beams having different wavelengths and generate an intensity signal trace of the intensity of each wavelength of the polychromatic reflected light.
REFERENCES:
patent: 4454001 (1984-06-01), Sternheim
patent: 5337144 (1994-08-01), Strul
patent: 5405488 (1995-04-01), Dimitrios et al.
patent: 5450205 (1995-09-01), Sawin et al.
patent: 5658418 (1997-08-01), Coronel et al.
patent: 5885472 (1999-03-01), Miyazaki et al.
patent: 6052188 (2000-04-01), Fluckiger
patent: 6081334 (2000-06-01), Grimbergen et al.
patent: 6090302 (2000-07-01), Smith
patent: 6113733 (2000-09-01), Eriguchi et al.
patent: 6137575 (2000-10-01), Sugiyama et al.
patent: 6160621 (2000-12-01), Perry
patent: 6406641 (2002-06-01), Golzarian
patent: 6406924 (2002-06-01), Grimbergen et al.
patent: 6521080 (2003-02-01), Balasubramhanya
patent: 6753972 (2004-06-01), Hirose et al.
patent: 6855567 (2005-02-01), Ni et al.
patent: 7306696 (2007-12-01), Lian et al.
patent: 7652774 (2010-01-01), Lian et al.
patent: 2002/0001862 (2002-01-01), Ushio
patent: 2003/0043383 (2003-03-01), Usui et al.
patent: 2004/0246493 (2004-12-01), Kim et al.
patent: 2000 292129 (2001-02-01), None
patent: WO-0124235 (2001-04-01), None
patent: WO-0235586 (2002-05-01), None
Bosch-Charpenay, S. et al.: “Real-Time Etch-Depth Measurements of MEMS Devices” Journal of Microelectromechanical Systems, IEEE Inc. New York, vol. 11, No. 2, Apr. 2002, pp. 111-117.
“In Situ Etch Rate Detecting Technique” IBM Technical Disclosure Bulletin, IBM Corp. New York, vol. 28, No. 9, Feb. 1986 pp. 3952-3954.
Haverflag, M. et al.: “In Situ Ellipsometry and Reflectometry During Etching of Patterned Surfaces”: Journal of Vac. Sci and Tech.: PT.B; New York, vol. 10, No. 6, Jan. 11, 1992.
European Search Report of EP Patent Application No. EP 03 02 5110, dated Feb. 24, 2004. European Patent Office, P.B. 5818-Patentlaan 2, 2280 HV Rijswijk (ZH).
U.S. Appl. No. 10/286,402 entitled “Interferometric Endpoint Determination in a Substrate Etching Process”, Office Action dated Nov. 12, 2004.
U.S. Appl. No. 10/286,402 entitled “Interferometric Endpoint Determination in a Substrate Etching Process”, Final Office Action dated May 20, 2005.
U.S. Appl. No. 10/286,402 entitled “Interferometric Endpoint Determination in a Substrate Etching Process”, Advisory Action dated Nov. 17, 2005.
U.S. Appl. No. 10/286,402 entitled “Interferometric Endpoint Determination in a Substrate Etching Process”, Office Action dated Jul. 12, 2006.
Davis Matthew F
Lian Lei
Applied Materials Inc.
Janah & Associates P.C.
Lyons Michael A
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