Deposition process for coating or filling re-entry shaped contac

Details Deposition process for coating or filling re-entry shaped contac Deposition process for coating or filling re-entry shaped contac

1997-06-02

1998-07-14

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438640, 438661, 438688, 438798, 20419017, 2041923, 20419235, H01L 2128

Patent

active

057803579

ABSTRACT:
A method and apparatus for depositing material to conformally cover or fill holes within the surface of a semiconductor substrate. The preferred method includes the steps of coherently depositing a first thickness of the material onto the surface of the substrate; reverse sputtering the deposited material so as to coat the sidewalls of the contact holes with the deposited material; after the first thickness of the material is deposited onto the surface of the substrate, depositing a second thickness of the material onto the surface of the substrate; and while depositing the second thickness of the material onto the surface of the substrate, heating the substrate to enhance reflow of the material being deposited.

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Onuki, et al., "Study on step Coverage and (111) Preferred Orientation of Aluminum Film Deposited by a New Switching Bias Sputtering Method," Applied Phys. Letters, vol. 53, No. 11, 968-970 (Sep. 12, 1988).
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