Deposition of silicon at temperatures above its melting point

Details Deposition of silicon at temperatures above its melting point Deposition of silicon at temperatures above its melting point

1985-08-26

1987-12-01

Doll, John

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156617SP, 156DIG64, 423349, C30B 1504

Patent

active

047102608

ABSTRACT:
Liquid silicon is deposited on a high surface area column of silicon nitride particles, by hydrogen decomposition of trichlorosilane. This is accomplished in an environment heated to a temperature in excess of the melting point of silicon. After deposition, the liquid silicon flows by gravity to a collection point. Preferably a liquid transfer system moves the silicon directly to a crystal pulling operation. The liquid transfer to immediate pulling conserves energy and allows for continual withdrawal of melt from the reactor. The immediate pulling provides additional purification and the crystal thus pulled is preferably used as feedstock for a final crystal pulling operation.

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Jewett et al., "Low-Cost Solar Array Project Task-1-Silicon Material", Oct. 1980, Energy Materials Corporation, Harvard Mass.

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