Method of manufacturing a passivating composite comprising a sil

Details Method of manufacturing a passivating composite comprising a sil Method of manufacturing a passivating composite comprising a sil

1981-09-22

1987-02-17

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 148187, 148188, 148189, 427 88, 427 94, H01L 21473

Patent

active

RE0323519

ABSTRACT:
The semiconductor device includes a layer of silicon nitride (Si.sub.3 N.sub.4) beneath a phosphosilicate glass (PSG) layer. A silicon nitride impervious layer prevents the oxidation of underlying, exposed silicon regions during a "flow" step and any "reflow" step. Accordingly, the flow of the PSG layer can be conducted in an atmosphere containing steam, which means that the PSG layer can contain less than about 7% phosphorus by weight. The reduction of the phosphorus content of the PSG layer provides increased reliability for the semiconductor device. The method of manufacturing such a device is also disclosed.

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