Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-22
2005-03-22
Abraham, Fetsum (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S612000, C438S243000, C438S386000, C257S374000
Reexamination Certificate
active
06869838
ABSTRACT:
A method of passivation layer deposition using a cyclical deposition process is described. The cyclical deposition process may comprise alternately adsorbing a silicon-containing precursor and a reactant gas on a substrate structure. Thin film transistors, such as a bottom-gate transistor or a top-gate transistor, including a silicon-containing passivation layer, may be formed using such cyclical deposition techniques.
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PCT Search Report dated Feb. 17, 2004; PCT/US 10928.
Harshbarger William Reid
Law Kam
Maydan Dan
Shang Quanyuan
Abraham Fetsum
Applied Materials Inc.
Moser Patterson & Sheridan LLP
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