Deposition methods utilizing microwave excitation

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C118S72300R

Reexamination Certificate

active

11519430

ABSTRACT:
The invention includes a deposition apparatus having a reaction chamber, and a microwave source external to the chamber. The microwave source is configured to direct microwave radiation toward the chamber. The chamber includes a window through which microwave radiation from the microwave source can pass into the chamber. The invention also includes deposition methods (such as CVD or ALD methods) in which microwave radiation is utilized to activate at least one component within a reaction chamber during deposition of a material over a substrate within the reaction chamber.

REFERENCES:
patent: 4778561 (1988-10-01), Ghanbari
patent: 5134965 (1992-08-01), Tokuda et al.
patent: 5327150 (1994-07-01), Cherrette
patent: 5545258 (1996-08-01), Katayama et al.
patent: 5645644 (1997-07-01), Mabuchi et al.
patent: 5653841 (1997-08-01), Krishnamurthy et al.
patent: 5698036 (1997-12-01), Ishii et al.
patent: 5749966 (1998-05-01), Shates
patent: 5788778 (1998-08-01), Shang et al.
patent: 5951887 (1999-09-01), Mabuchi et al.
patent: 5988104 (1999-11-01), Nambu
patent: 6040021 (2000-03-01), Miyamoto
patent: 6133807 (2000-10-01), Akiyama et al.
patent: 6158383 (2000-12-01), Watanabe et al.
patent: 6311638 (2001-11-01), Ishii et al.
patent: 6347602 (2002-02-01), Goto et al.
patent: 6416822 (2002-07-01), Chiang et al.
patent: 6446573 (2002-09-01), Hirayama et al.
patent: 6454912 (2002-09-01), Ahn et al.
patent: 6527908 (2003-03-01), Kanetsuki et al.
patent: 7105208 (2006-09-01), Carpenter et al.
patent: 0 520 832 (1992-12-01), None
patent: 1 15 147 (2001-07-01), None
patent: 03/009913 (2003-03-01), None
patent: PCT/US03/09913 (2003-03-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Deposition methods utilizing microwave excitation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Deposition methods utilizing microwave excitation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deposition methods utilizing microwave excitation will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3912933

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.