Deposition methods and apparatuses providing surface activation

Details Deposition methods and apparatuses providing surface activation Deposition methods and apparatuses providing surface activation

2006-08-22

2006-08-22

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S681000

Reexamination Certificate

active

07094690

ABSTRACT:
A deposition method includes, at a first temperature, contacting a substrate with a surface activation agent and adsorbing a first layer over the substrate. At a second temperature greater than the first temperature, the first layer may be contacted with a first precursor, chemisorbing a second layer at least one monolayer thick over the substrate. The first layer may enhance a chemisorption rate of the first precursor compared to the substrate without the surface activation agent adsorbed thereon. One deposition apparatus includes a deposition chamber with a precursor gas dispenser in a contacting zone and a cooling gas dispenser in a cooling zone. A substrate chuck moves by linear translational motion from the contacting zone to the cooling zone. The substrate chuck includes a substrate lift that positions a deposition substrate at an elevation above a heated surface of the substrate chuck when dispensing a cooling gas or surface activation agent. Another deposition apparatus includes a cooling chamber with a cooled substrate chuck and a contacting chamber with a heated substrate chuck. The contacting chamber also has a precursor gas dispenser and the heated substrate chuck includes a substrate lift. A robotic substrate handler moves a substrate from the cooled substrate chuck to the heated substrate chuck.

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