Deposition method of TiN thin film having a multi-layer...

Details Deposition method of TiN thin film having a multi-layer... Deposition method of TiN thin film having a multi-layer...

2007-08-07

2007-08-07

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21170

Reexamination Certificate

active

11205990

ABSTRACT:
Provided is a method of depositing a metal nitride film having a multilayer structure and different deposition speeds on a substrate. The method is performed by forming a first lower metal nitride film on the substrate at a first deposition speed, forming a second lower metal nitride film on the first lower metal nitride film at a second deposition speed, and forming an upper metal nitride film having a large content of nitrogen (N) on a lower TiN film which is formed by the forming of the first lower metal nitride film and the second lower metal nitride film, at a third deposition speed, to improve stability with respect to exposure to air/moisture. The deposition speed of the metal nitride film having a multi-layer structure satisfies a relationship that the second deposition speed≧the first deposition speed≧the third deposition speed.

REFERENCES:
patent: 6849298 (2005-02-01), Pyo

Affiliated with

Also associated with

Rating

Deposition method of TiN thin film having a multi-layer... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Deposition method of TiN thin film having a multi-layer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deposition method of TiN thin film having a multi-layer... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3876619