Deposition method of insulating layers having low dielectric...

Details Deposition method of insulating layers having low dielectric... Deposition method of insulating layers having low dielectric...

2006-01-10

2006-01-10

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S786000

Reexamination Certificate

active

06984594

ABSTRACT:
The present invention relates to a process for vapor depositing alow dielectric insulating film, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device.

REFERENCES:
patent: 6593248 (2003-07-01), Loboda et al.

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