Deposition method of insulating layers having low dielectric...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C257S347000, C257SE27111

Reexamination Certificate

active

07323371

ABSTRACT:
The present invention relates to a process for vapor depositing a low dielectric insulating film, a thin film transistor using the same, and a preparation method thereof, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device. The present invention also relates to a thin film transistor using the process and preparation method thereof.

REFERENCES:
patent: 6024044 (2000-02-01), Law et al.
patent: 6590226 (2003-07-01), Kong et al.
patent: 6872976 (2005-03-01), Kong et al.
patent: 6984594 (2006-01-01), Yang et al.
patent: 2002/0117691 (2002-08-01), Choi et al.

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