Deposition method of insulating layers having low dielectric...

Details Deposition method of insulating layers having low dielectric... Deposition method of insulating layers having low dielectric...

2008-01-29

2008-01-29

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257S347000, C257SE27111

Reexamination Certificate

active

07323371

ABSTRACT:
The present invention relates to a process for vapor depositing a low dielectric insulating film, a thin film transistor using the same, and a preparation method thereof, and more particularly to a process for vapor deposition of low dielectric insulating film that can significantly improve a vapor deposition speed while maintaining properties of the low dielectric insulating film, thereby solving parasitic capacitance problems to realize a high aperture ratio structure, and can reduce a process time by using silane gas when vapor depositing an insulating film by a CVD or PECVD method to form a protection film for a semiconductor device. The present invention also relates to a thin film transistor using the process and preparation method thereof.

REFERENCES:
patent: 6024044 (2000-02-01), Law et al.
patent: 6590226 (2003-07-01), Kong et al.
patent: 6872976 (2005-03-01), Kong et al.
patent: 6984594 (2006-01-01), Yang et al.
patent: 2002/0117691 (2002-08-01), Choi et al.

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