Deposition method of a dielectric layer

Details Deposition method of a dielectric layer Deposition method of a dielectric layer

2005-06-28

2005-06-28

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S003000, C438S240000, C438S396000

Reexamination Certificate

active

06911402

ABSTRACT:
A method for depositing a dielectric layer having a multi-layer structure on a substrate includes forming an oxidation barrier layer on a surface of a substrate; forming a plurality of dielectric layers on the oxidation barrier layer, wherein one of a plurality of additional oxidation barrier layers is disposed between each of the plurality of dielectric layers and an adjacent dielectric layer. Accordingly, a capacitor having low leakage current and high capacitance is obtained. In addition, a dielectric constant is controlled by adjusting a lattice constant so that a multi-layer structure of high dielectric constant is formed on a large substrate.

REFERENCES:
patent: 5284689 (1994-02-01), Marshall et al.
patent: 5688724 (1997-11-01), Yoon et al.
patent: 6320213 (2001-11-01), Kirlin et al.
patent: 6407435 (2002-06-01), Ma et al.
patent: 6551730 (2003-04-01), Barbezat et al.
patent: 6660660 (2003-12-01), Haukka et al.
patent: 0 540 994 (1993-05-01), None
patent: 1 341 217 (2003-09-01), None
patent: 2001-267566 (2001-09-01), None
patent: WO 02/31875 (2002-04-01), None
patent: WO 02/31875 (2002-04-01), None
Choi, et al., *, Jpn. J. of Applied Physics, 40(4B, Part 1):2940-2942, (Apr. 2001).
* Entitled: “Electrical Characteristics of Pt/SrBi2Ta2O9/Ia2O5/Si Using Ta2O5 as the Buffer Layer”.
Clark-Phelps, et al. **, Mat. Res. Soc. Symp. Proc. vol. 670, Society, K2.2.1-6 (2001).
** Entitled: “Engineered tantalum aluminate and hafnium aluminate ALD films for ultrathin ... ”.
Wilk, et al., ***, Journal of Applied Physics, vol. 89, No. 10:5243-5275, (May 15, 2001).
*** Entitled: “High-k gate dielectrics: Current status and materials properties considerations”.

Affiliated with

Also associated with

Rating

Deposition method of a dielectric layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Deposition method of a dielectric layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Deposition method of a dielectric layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3518199