Semiconductor device and method of manufacturing same

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S108000, C438S109000, C257S777000, C257S779000, C257S778000, C257S784000, C257S795000

Reexamination Certificate

active

06905913

ABSTRACT:
A method of manufacturing a semiconductor device includes providing first pad electrodes for connection to leads and second pad electrodes for an internal interface, over a main surface of a first LSI chip. Third pad electrodes of a second LSI chip and the second pad electrodes of the first LSI chip are respectively electrically connected to one another by wires. Circuits required as for a system LSI, which are not included in the first LSI chip, are placed over the second LSI chip, to implement a desired function used as for a system LSI by the two LSI chips. The plurality of LSI chips are then sealed with a resin.

REFERENCES:
patent: 5502289 (1996-03-01), Takiar et al.
patent: 5805865 (1998-09-01), Mimura et al.
patent: 5814881 (1998-09-01), Alagaratnam et al.
patent: 5952725 (1999-09-01), Ball
patent: 6005778 (1999-12-01), Spielberger et al.
patent: 6087722 (2000-07-01), Lee et al.
patent: 6133637 (2000-10-01), Hikita et al.
patent: 6198136 (2001-03-01), Voldman et al.
patent: 6208018 (2001-03-01), Ma et al.
patent: 6215182 (2001-04-01), Ozawa et al.
patent: 6316838 (2001-11-01), Ozawa et al.
patent: 2002/0017718 (2002-02-01), Hikita et al.
patent: 61-099362 (1986-05-01), None
patent: 03-116860 (1991-05-01), None
patent: 5267557 (1993-10-01), None
patent: 05-343609 (1993-12-01), None
patent: 6295978 (1994-10-01), None
patent: 738052 (1995-02-01), None
patent: 8288453 (1996-11-01), None
patent: 09-152979 (1997-06-01), None
patent: 2001-015680 (2001-01-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and method of manufacturing same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3518198

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.