Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-30
2005-08-30
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S918000
Reexamination Certificate
active
06936530
ABSTRACT:
A method of forming an Si—Ge epitaxial layer comprising the following steps. A structure is provided and a doped Si—Ge seed layer is formed thereover. The doped Si—Ge seed layer having increased nucleation sites. A Si—Ge epitaxial layer upon the doped Si—Ge seed layer whereby the Si—Ge epitaxial layer lacks discontinuity.
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Chen Shih-Chang
Lee Kuen-Chyr
Liang Mong-Song
Yao Liang-Gi
Dang Phuc T.
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
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