Deposition method for forming a film including metal,...

Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma

Reexamination Certificate

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C427S576000

Reexamination Certificate

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07491430

ABSTRACT:
A deposition method for forming a thin film on a processed substrate by supplying a first gas including a metal, nitrogen, and carbon and a second gas reducing the first gas into a process vessel where a substrate holding table for holding the processed substrate is provided inside thereof, the deposition method includes a first step supplying the first process gas into the process vessel, and a second step supplying the second process gas so that the second process gas is plasma-excited by a plasma-exciting part provided in the process vessel. A content of at least one of the metal, nitrogen, and carbon in the thin film is controlled by changing a radio frequency power applied to the plasma-exciting part.

REFERENCES:
patent: 5306666 (1994-04-01), Izumi
patent: 5916365 (1999-06-01), Sherman
patent: 6416822 (2002-07-01), Chiang et al.
patent: 6630201 (2003-10-01), Chiang et al.
patent: 7022605 (2006-04-01), Doan et al.
patent: 7314835 (2008-01-01), Ishizaka et al.
patent: 7338901 (2008-03-01), Ishizaka
patent: 2002/0076507 (2002-06-01), Chiang et al.
patent: 2002/0090467 (2002-07-01), Ramiah et al.
patent: 2002/0106846 (2002-08-01), Seutter et al.
patent: 2002/0197402 (2002-12-01), Chiang et al.
patent: 2003/0013320 (2003-01-01), Kim et al.
patent: 2003/0017697 (2003-01-01), Choi et al.
patent: 2004/0009307 (2004-01-01), Koh et al.
patent: 2004/0011286 (2004-01-01), Kwon
patent: 2004/0082199 (2004-04-01), Cheung et al.
patent: 2004/0099215 (2004-05-01), Danek et al.
patent: 2006/0008595 (2006-01-01), Ishizaka et al.
patent: WO 2004/112114 (2004-12-01), None

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