Coating apparatus – Gas or vapor deposition – With treating means
Patent
1997-05-06
2000-06-06
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
118715, 118733, C23C 1600
Patent
active
060705515
ABSTRACT:
An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF.sub.4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF.sub.4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.
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Collins Alan W.
Ishikawa Tetsuya
Li Shijian
Redeker Fred C.
Wang Yaxin
Applied Materials Inc.
Bueker Richard
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