Depositing an oxide

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S782000, C257SE23095

Reexamination Certificate

active

10696204

ABSTRACT:
A dielectric deposited on a substrate may be exposed to a salt solution. While exposed to the salt solution, an oxide is deposited on the dielectric.

REFERENCES:
patent: 3597834 (1971-08-01), Lathrop et al.
patent: 4297393 (1981-10-01), Denning et al.
patent: 5830242 (1998-11-01), Yao
patent: 5969419 (1999-10-01), Tijburg et al.
patent: 6420091 (2002-07-01), Nakayama et al.
patent: 6679996 (2004-01-01), Yao
patent: 6780562 (2004-08-01), Sorori et al.
patent: 2004/0200962 (2004-10-01), Ishikawa et al.
Robert M. Wallace, “Challenges for the Characterization and Integration of High-k Gate Dielectrics,”pp. 1-50, Nov. 2002, http://www.mtsc.unt.edu/lemd/Presentations/AVS%202002%20Invited%20Talk.pdf.
Gerry Lucovsky, “The Physics and Chemistry of High-k Dielectrics and their Interfaces,”pp. 1-49, available on Jun. 2003, at http://www.sematech.org/public
ews/conferences/Reliability4/Documents/03—Gate—Stack—Transitor—Lucovsky.pdf.

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