Defect gettering by induced stress

Details Defect gettering by induced stress Defect gettering by induced stress

1998-05-21

1999-07-27

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Including region containing crystal damage

257590, H01L 2930

Patent

active

059295082

ABSTRACT:
The present invention induces provides a gettering trench on the front surface of a device substrate. In one embodiment it induces stress and simultaneously forms a gettering zone 40 for gettering impurities in an integrated circuit structure. In another embodiment, the trench is filled with gettering material 72 such as polysilicon. The two gettering mechanisms may be combined 82,84. The invention is useful for providing gettering in bonded wafers and in silicon-on-insulator devices (FIGS. 4,5).

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