Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2009-09-21
2011-11-29
Reames, Matthew (Department: 2893)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C257SE21328
Reexamination Certificate
active
08067302
ABSTRACT:
A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then melted, resolidified, and annealed to completely dissociate and activate the boron clusters.
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Applied Materials Inc.
Patterson & Sheridan L.L.P.
Reames Matthew
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