Decoupled complementary mask patterning transfer method

Details Decoupled complementary mask patterning transfer method Decoupled complementary mask patterning transfer method

2006-11-07

2006-11-07

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S586000, C438S585000

Reexamination Certificate

active

07132327

ABSTRACT:
A patterning method allows for separate transfer of a complementary reticle set. In one embodiment, for example, the method includes etching a phase shift mask (PSM), then etching a cut mask for a cPSM mask. Moreover, a decoupled complementary mask patterning transfer method includes two separate and decoupled mask patterning steps which form combined patterns through the use of partial image transfers into an intermediate hard mask prior to final wafer patterning. The intermediate and final hard mask materials are chosen to prevent image transfer into an underlying substrate or wafer prior to the final etch process.

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