Decaborane ion source

Details Decaborane ion source Decaborane ion source

2005-10-25

2005-10-25

Berman, Jack (Department: 2881)

Radiant energy

Ion generation

Electron bombardment type

C250S492210, C250S492220

Reexamination Certificate

active

06958481

ABSTRACT:
An ion source (50) for an ion implanter is provided, comprising a remotely located vaporizer (51) and an ionizer (53) connected to the vaporizer by a feed tube (62). The vaporizer comprises a sublimator (52) for receiving a solid source material such as decaborane and sublimating (vaporizing) the decaborane. A heating mechanism is provided for heating the sublimator, and the feed tube connecting the sublimator to the ionizer, to maintain a suitable temperature for the vaporized decaborane. The ionizer (53) comprises a body (96) having an inlet (119) for receiving the vaporized decaborane; an ionization chamber (108) in which the vaporized decaborane may be ionized by an energy-emitting element (110) to create a plasma; and an exit aperture (126) for extracting an ion beam comprised of the plasma. A cooling mechanism (100, 104) is provided for lowering the temperature of walls (128) of the ionization chamber (108) (e.g., to below 350° C.) during ionization of the vaporized decaborane to prevent dissociation of vaporized decaborane molecules into atomic boron ions. In addition, the energy-emitting element is operated at a sufficiently low power level to minimize plasma density within the ionization chamber (108) to prevent additional dissociation of the vaporized decaborane molecules by the plasma itself.

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Jiro Matsuo, Daisuke Takeuchi, Takaaki Aoki and Isao Yamada Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan (Cluster Ion Implantation for Shallow Junction Formation) Reprinted from IEEE Proceedings of the 11thInt'l Conference on Ion Implantation Technology, Austin, TX, vol. 1, Issue 1, Jun. 16-21, 1996.
Ken-ichi Goto, Jiro Matsuo*, Yoko Tada, Tetsu Tanaka, Youichi Momiyama, Toshihiro Sugii, and Isao Yamada* (A High Performance 50 nm PMOSFET using Decaborane (B10H14) Ion Implantation and 2-step Activation Annealing Process * Ion Beam Engineering Experimental Lab., Kyoto University, Sakyo, Kyoto 606-01, Japan.
Roger Smith and Marcus Shaw, Roger P. Webb, Majeed A. Foad (Ultrashallow junctions in Si using decaborane? A Molecular dynamics simulation study) Received Sep. 4, 1997: accepted for publication Dec. 2, 1997).
Majeed A. Foad, Roger Webb, Roger Smith, Erin Jones, Amir Al-Bayati, Mark Lee, Vikas Agrawal, Sanjay Banerjee, Jiro Matsuo, and Isao Yamada (Formation of Shallow Junctions Using Decaborane Molecular Ion Implantation; Comparison With Molecular Dynamics Simulation).
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Ken-ichi Goto, Member, IEEE, Jiro Matsuo, Yoko Tada, Toshihiro Sugii, and Isao Yamada, Member, IEEE (Decaborane (B10H14) Ion Implantation Technology for Sub-0.1 μm PMOSFET's) IEEE Transactions On Electron Devices, vol. 46, No. 4, Apr., 1999.

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