Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into...
Reexamination Certificate
2000-03-30
2001-08-14
Nguyen, Tan T. (Department: 2818)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
C438S659000, C438S660000, C438S514000, C438S522000, C257S442000
Reexamination Certificate
active
06274465
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to a method and device for controlling the diffusion of dopants in a semiconductor substrate.
BACKGROUND OF THE INVENTION
As semiconductor device structure sizes shrink, greater and greater control must be excised to control the formation of the ever shrinking structures. The location and dimensions of the smaller and smaller structures require careful control to ensure proper placement. At the minute dimensions involved, small errors in misplacement and/or size of structures formed can result in non-functional or mis-functioning devices. Processes involved in semiconductor device manufacture require ever increasing levels of precision to create the desired structures.
SUMMARY OF THE INVENTION
The present invention concerns a method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to a DC electric field.
The present invention also relates to a device for forming a desired junction profile in a semiconductor substrate. The device includes means for annealing a semiconductor substrate in which at least one dopant has been diffused. The annealing means includes at least one heat source. The device also includes means for producing a DC electric field and exposing the semiconductor substrate to the DC electric field simultaneous with the annealing.
Still other objects and advantages of the present invention will become readily apparent by those skilled in the art from the following detailed description, wherein it is shown and described only the preferred embodiments of the invention, simply by way of illustration of the best mode contemplated of carrying out the invention. As will be realized, the invention is capable of other and different embodiments, and its several details are capable of modifications in various obvious respects, without departing from the invention. Accordingly, the drawings and description are to be regarded as illustrative in nature and not as restrictive.
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Ballantine Arne W.
Ellis-Monaghan John J.
Furukawa Toshiharu
Miller Glenn R.
Slinkman James A.
Berry Renee R.
Connolly Bove Lodge & Hutz
International Business Machines Corporataion
Nguyen Tan T.
Sabo William D.
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