Data read circuit for use in a semiconductor memory and a...

Static information storage and retrieval – Read/write circuit – Precharge

Reexamination Certificate

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Details

C365S205000, C365S196000, C365S189110

Reexamination Certificate

active

11249858

ABSTRACT:
A data read circuit and method for use in a semiconductor memory device that has a memory cell array are provided. The circuit includes a selector for selecting a unit cell within the memory cell array in response to an address signal; a clamping unit for supplying a clamp voltage having a level for a read operation to a bit line of the selected unit cell in response to a clamp control signal; a precharge unit for precharging a sensing node to a voltage having a power source level in response to a control signal of a first state in a precharge mode, and compensating through the sensing node for a reduced quantity of current at the bit line in response to a control signal of a second state in a data sensing mode; and a sense amplifier unit for comparing a level of the sensing node with a reference level, and for sensing data stored in the selected unit cell.

REFERENCES:
patent: 6343039 (2002-01-01), Agawa et al.
patent: 6396305 (2002-05-01), Carlson
patent: 6426671 (2002-07-01), Kono
patent: 6801463 (2004-10-01), Khellah et al.
patent: 6982913 (2006-01-01), Oh et al.

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