Data read circuit for use in a semiconductor memory and a...

Details Data read circuit for use in a semiconductor memory and a... Data read circuit for use in a semiconductor memory and a...

2006-01-03

2006-01-03

Yoha, Connie C. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Precharge

C365S205000, C365S189070, C365S189060, C365S189090

Reexamination Certificate

active

06982913

ABSTRACT:
A data read circuit and method for use in a semiconductor memory device that has a memory cell array are provided. The circuit includes a selector for selecting a unit cell within the memory cell array in response to an address signal; a clamping unit for supplying a clamp voltage having a level for a read operation to a bit line of the selected unit cell in response to a clamp control signal; a precharge unit for precharging a sensing node to a voltage having a power source level in response to a control signal of a first state in a precharge mode, and compensating through the sensing node for a reduced quantity of current at the bit line in response to a control signal of a second state in a data sensing mode; and a sense amplifier unit for comparing a level of the sensing node with a reference level, and for sensing data stored in the selected unit cell.

REFERENCES:
patent: 6198671 (2001-03-01), Aoyama et al.
patent: 6795346 (2004-09-01), Otani et al.

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