Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Patent
1995-11-30
1997-01-28
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
365196, 365190, 365208, 326 24, 326 27, 326 28, G11C 700
Patent
active
055983715
ABSTRACT:
A data input/output sensing circuit of a semiconductor memory device including a plurality of memory cells, the circuit comprises: input/output lines of the memory cell; data input/output terminals connected to outside of the memory cells; a single data input/output line connected between the input/output lines and the data input/output terminals; a sensing unit for sensing whether or not effective data is provided in the data input/output lines to thereby generate a sensing signal; an output driving unit for transmitting data of the data input/output lines to the data input/output terminals in response to the sensing signal; and a writing driving unit for inputting data of the data input/output terminals in response to the sensing signal.
REFERENCES:
patent: 5005156 (1991-04-01), Takai
patent: 5067109 (1991-11-01), Kim et al.
Lee Ho-cheol
Lee Seung-Hun
Nelms David C.
Samsung Electronics Co,. Ltd.
Tran Andrew Q.
LandOfFree
Data input/output sensing circuit of semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Data input/output sensing circuit of semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Data input/output sensing circuit of semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-945613