Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-10-31
2008-08-19
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23167
Reexamination Certificate
active
07414315
ABSTRACT:
A semiconductor device includes a substrate, an inter-metal dielectric (IMD) layer over the substrate, and either a nitrogen-containing tetraethoxysilane (TEOS) oxide layer or an oxygen-rich TEOS oxide layer over the IMD layer. The molecular ratio of oxygen in the oxygen-rich TEOS oxide layer is greater than 70%. The IMD layer comprises an extra-low dielectric constant (ELK) layer.
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S.M. Jang et al., “Effects of PE-TEOS Process on O3-TEOS Characteristics and Device Reliability”, SPIE vol. 2636, 2002, pp. 307-316.
Y.M. Lin et al., “Improvement of Water-Related Hot-Carrier Reliability by Optimizing the Plasma-Enhanced Tetra-ethoxysilane Deposition Process”, J. Electrochem. Soc., vol. 144, No. 8, Aug. 1997, pp. 2898-2903.
Jang Syun-Ming
Wu Tsang-Jiuh
Dolan Jennifer M
Finnegan Henderson Farabow Garrett & Dunner LLP
Jr. Carl Whitehead
Taiwan Semiconductor Manufacturing Company , Ltd.
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