Damascene structure with high moisture-resistant oxide and...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257SE23167

Reexamination Certificate

active

07414315

ABSTRACT:
A semiconductor device includes a substrate, an inter-metal dielectric (IMD) layer over the substrate, and either a nitrogen-containing tetraethoxysilane (TEOS) oxide layer or an oxygen-rich TEOS oxide layer over the IMD layer. The molecular ratio of oxygen in the oxygen-rich TEOS oxide layer is greater than 70%. The IMD layer comprises an extra-low dielectric constant (ELK) layer.

REFERENCES:
patent: 5389581 (1995-02-01), Freiberger et al.
patent: 6051870 (2000-04-01), Ngo
patent: 6057242 (2000-05-01), Kishimoto
patent: 6407011 (2002-06-01), Ikeda et al.
patent: 2002/0063336 (2002-05-01), Matsubara
patent: 2002/0076492 (2002-06-01), Loan et al.
patent: 2002/0175415 (2002-11-01), Matsunaga
patent: 2004/0137711 (2004-07-01), Deguchi
S.M. Jang et al., “Effects of PE-TEOS Process on O3-TEOS Characteristics and Device Reliability”, SPIE vol. 2636, 2002, pp. 307-316.
Y.M. Lin et al., “Improvement of Water-Related Hot-Carrier Reliability by Optimizing the Plasma-Enhanced Tetra-ethoxysilane Deposition Process”, J. Electrochem. Soc., vol. 144, No. 8, Aug. 1997, pp. 2898-2903.

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