Damascene process for a T-shaped gate electrode

Details Damascene process for a T-shaped gate electrode Damascene process for a T-shaped gate electrode

2006-03-07

2006-03-07

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S585000

Reexamination Certificate

active

07008832

ABSTRACT:
A damascene process can be utilized to form a T-shaped gate. A silicon rich nitride or SiON layer can be etched to form a first aperture. An oxide layer can be provided above the silicon rich nitride layer or SiON layer. A second aperture or trench can be provided in the oxide layer. The second trench can have a larger width than the trench in the silicon rich nitride layer or SiON layer. A gate conductor material, such as polysilicon, can be provided in the first trench and/or the second trench.

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U.S. Appl. No. 09/620,300, “T-Gate Formation using a Modified Conventional Ply Process” filed on Jul. 20, 2000.
U.S. Appl. No. 09/620,145, “T-Gate Formation using Modified Damascene Processing with Two Masks” filed on Jul. 20, 2000.
U.S. Appl. No. 09/643,611, “T or T/Y Gate Formation Using Trim Etch Processing” filed on Aug. 22, 2000.
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U.S. Appl. No. 09/643,343, “Y-Gate Formation using Damascence Processing” filed Aug. 22, 2000.

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