Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-01-05
2009-06-02
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C257SE21508, C257SE21514
Reexamination Certificate
active
07541272
ABSTRACT:
A system and method for forming a novel C4 solder bump for BLM (Ball Limiting Metallurgy) includes a novel damascene technique is implemented to eliminate the Cu undercut problem and improve the C4 pitch. In the process, a barrier layer metal stack is deposited above a metal pad layer. A top layer of the barrier layer metals (e.g., Cu) is patterned by CMP. Only bottom layers of the barrier metal stack are patterned by a wet etching. The wet etch time for the Cu-based metals is greatly reduced resulting in a reduced undercut. This allows the pitch of the C4 solder bumps to be reduced. An alternate method includes use of multiple vias at the solder bump terminal.
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Daubenspeck Timothy H.
Gambino Jeffrey P.
Muzzy Christopher D.
Sauter Wolfgang
International Business Machines - Corporation
Kotulak, Esq. Richard M.
Lindsay, Jr. Walter L
Scully , Scott, Murphy & Presser, P.C.
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