Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2005-01-04
2005-01-04
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S411000, C438S421000, C438S422000, C438S424000, C438S427000, C438S428000, C438S432000, C438S435000, C438S619000, C438S624000, C438S637000, C438S687000
Reexamination Certificate
active
06838355
ABSTRACT:
A method for forming back-end-of-line (BEOL) interconnect structures in disclosed. The method and resulting structure includes etchback for low-k dielectric materials. Specifically, a low dielectric constant material is integrated into a dual or single damascene wiring structure which contains a dielectric material having relatively high dielectric constant (i.e., 4.0 or higher). The damascene structure comprises the higher dielectric constant material immediately adjacent to the metal interconnects, thus benefiting from the mechanical characteristics of these materials, while incorporating the lower dielectric constant material in other areas of the interconnect level.
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Cooney, III Edward C.
Dalton Timothy J.
Fitzsimmons John A.
Gambino Jeffrey P.
Nicholson Lee M.
Gurley Lynne A.
International Business Machines - Corporation
Pepper Margaret A.
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