Damage propagation barrier and method of forming

Details Damage propagation barrier and method of forming Damage propagation barrier and method of forming

2011-03-22

2011-03-22

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to nonconductive state

C257SE21592

Reexamination Certificate

active

07910408

ABSTRACT:
A conductor-filled damage propagation barrier is formed extending into a low-k dielectric layer between a fuse and an adjacent circuit element for preventing propagation of damage during a fuse blow operation. Conductor material filling the damage propagation barrier is formed from the same conductor layer as that used to form an interconnect structure.

REFERENCES:
patent: 5420455 (1995-05-01), Gilmour et al.
patent: 5523253 (1996-06-01), Gilmour et al.
patent: 6022791 (2000-02-01), Cook et al.
patent: 6074940 (2000-06-01), Lee et al.
patent: 6104079 (2000-08-01), Stamper
patent: 6448113 (2002-09-01), Lee et al.
patent: 6486526 (2002-11-01), Narayan et al.
patent: 6525398 (2003-02-01), Kim et al.
patent: 6653710 (2003-11-01), Adkisson et al.
patent: 6878614 (2005-04-01), Sun et al.
patent: 7479447 (2009-01-01), Daubenspeck et al.
patent: 2003/0139028 (2003-07-01), Sun et al.
patent: 2005/0082635 (2005-04-01), Kang et al.
patent: 2006/0223242 (2006-10-01), Daubenspeck et al.
patent: PCT/EP2007/060219 (2008-02-01), None
Notice of Allowance, dated Sep. 15, 2008, in U.S. Appl. No. 11/277,398, now US Patent No. 7,479,447.

Affiliated with

Also associated with

Rating

Damage propagation barrier and method of forming does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Damage propagation barrier and method of forming, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Damage propagation barrier and method of forming will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2687809