Cyclical deposition of tungsten nitride for metal oxide gate...

Details Cyclical deposition of tungsten nitride for metal oxide gate... Cyclical deposition of tungsten nitride for metal oxide gate...

2006-10-03

2006-10-03

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S648000

Reexamination Certificate

active

07115499

ABSTRACT:
A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate. The barrier layer has a reduced resistivity, lower concentration of fluorine, and can be deposited at any desired thickness, such as less than 100 angstroms, to minimize the amount of barrier layer material.

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