CVD TiSiN barrier for copper integration

Details CVD TiSiN barrier for copper integration CVD TiSiN barrier for copper integration

2005-10-25

2005-10-25

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S740000, C438S744000

Reexamination Certificate

active

06958296

ABSTRACT:
The present invention provides a method of forming a titanium silicon nitride barrier layer on a semiconductor wafer, comprising the steps of depositing a titanium nitride layer on the semiconductor wafer; plasma-treating the titanium nitride layer in a N2/H2plasma; and exposing the plasma-treated titanium nitride layer to a silane ambient, wherein silicon is incorporated into the titanium nitride layer as silicon nitride thereby forming a titanium silicon nitride barrier layer. Additionally, there is provided a method of improving the barrier performance of a titanium nitride layer comprising the step of introducing silicon into the titanium nitride layer such that the silicon is incorporated into the titanium nitride layer as silicon nitride. Also provided is a method of integrating copper into a semiconductor device and a method of improving copper wettability at a copper/titanium nitride interface in a semiconductor device.

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