CVD apparatuses and methods of forming a layer over a...

Details CVD apparatuses and methods of forming a layer over a... CVD apparatuses and methods of forming a layer over a...

2005-02-01

2005-02-01

Lund, Jeffrie R. (Department: 1763)

Coating apparatus

Gas or vapor deposition

C156S345330, C156S345340

Reexamination Certificate

active

06849133

ABSTRACT:
The invention includes a method of forming a layer on a semiconductor substrate that is provided within a reaction chamber. The chamber has at least two inlet ports that terminate in openings. A first material is flowed into the reaction chamber through the opening of a first of the inlet ports. At least a portion of the first material is deposited onto the substrate. The reaction chamber is purged by flowing an inert material into the reaction chamber through the opening of a second of the inlet ports. The inert material passes from the opening and through a distribution head that is positioned within the reaction chamber between the first and second openings. A second material can then be flowed into the chamber through an opening in a third inlet port and deposited onto the substrate. The invention also includes a chemical vapor deposition apparatus.

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