Critical dimension control in a semiconductor fabrication...

Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C216S060000, C216S066000, C216S072000

Reexamination Certificate

active

10768455

ABSTRACT:
A method for controlling a critical dimension in an etched structure comprises the steps of: forming a hard mask above a substrate, measuring a critical dimension of the hard mask, and using the measured hard mask critical dimension to control a critical dimension trim operation performed on a circuit trace above the substrate.

REFERENCES:
patent: 6350390 (2002-02-01), Liu et al.
patent: 6369891 (2002-04-01), Kane et al.
patent: 6388253 (2002-05-01), Su
patent: 6486492 (2002-11-01), Su
patent: 2004/0198065 (2004-10-01), Lee et al.
patent: 2004/0203177 (2004-10-01), Davis et al.
patent: 2004/0253812 (2004-12-01), Friedmann et al.
patent: 2005/0085090 (2005-04-01), Mui et al.
Guenther Ruhl et al., “Optimizing The Chromium Dry Etch Process”, at http://www.reed-electronics.com/semiconductor/index.asp?layout=articlePrint&articleID=C... Aug. 5, 2003.
W. Jarrett Campbell, Ph.D., “Run-To-Run Control Of Photolithography Processes”, Summer 2000 Yield Management Solutions, pp. 65-68.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Critical dimension control in a semiconductor fabrication... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Critical dimension control in a semiconductor fabrication..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Critical dimension control in a semiconductor fabrication... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3885829

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.