Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-01-29
2010-10-19
Fulk, Steven J (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S339000, C257SE21409
Reexamination Certificate
active
07816214
ABSTRACT:
A semiconductor structure includes a substrate, a first well region of a first conductivity type overlying the substrate, a second well region of a second conductivity type opposite the first conductivity type overlying the substrate, a cushion region between and adjoining the first and the second well regions, an insulation region in a portion of the first well region and extending from a top surface of the first well region into the first well region, a gate dielectric extending from over the first well region to over the second well region, wherein the gate dielectric has a portion over the insulation region, and a gate electrode on the gate dielectric.
REFERENCES:
patent: 5912493 (1999-06-01), Gardner et al.
patent: 6265725 (2001-07-01), Moll et al.
patent: 6265752 (2001-07-01), Liu et al.
Chou Hsueh-Liang
Chu Weng-Chu
Fan Fu-Jier
Huang Tsung-Yi
Wu Chen-Bau
Fulk Steven J
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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