Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-02
2006-05-02
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S629000, C438S643000, C438S648000, C438S653000, C438S687000
Reexamination Certificate
active
07037824
ABSTRACT:
Tungsten studs of a size comparable to vias are provided to integrate and interface between copper and aluminum metallization layers in an integrated circuit and/or package therefor by lining a via opening, preferably with layers of tantalum nitride and PVD tungsten as a barrier against the corrosive effects of tungsten fluoride on copper. The reduced size of the tungsten studs relative to known interface structures allows wiring and connection pads to be formed in a single aluminum layer, improving performance and reducing process time and cost.
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Burrell Lloyd G.
Cooney, III Edward E.
Gambino Jeffrey P.
Heidenreich, III John E.
Lee Hyun Koo
Cai Yuanmin
International Business Machines - Corporation
Picardat Kevin M.
Whitham Curtis Christofferson & Cook PC
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