Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1999-03-18
2000-10-31
Diamond, Alan
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429812, 20429813, 20419212, 20419215, 438485, 257665, 257741, C23C 1434
Patent
active
061397016
ABSTRACT:
A copper sputtering target is provided for producing copper films having reduced in-film defect densities. In addition to reducing dielectric inclusion content of the copper target material, the hardness of the copper target is maintained within a range greater than 45 Rockwell. Within this range defect generation from arc-induced mechanical failure is reduced. Preferably hardness is achieved by limiting grain size to less than 50 microns, and most preferably to less than 25 microns. The surface roughness preferably is limited to less than 20 micro inches, or more preferably, less than 5 micro inches to reduce defect generation from field-enhanced emission. This grain size range preferably is achieved by limiting the purity level of the copper target material to a level less than 99.9999%, preferably within a range between 99.995% to 99.9999%, while reducing particular impurity levels.
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Abburi Murali
Narasimhan Murali
Pavate Vikram
Ramaswami Seshadri
Applied Materials Inc.
Diamond Alan
Dugan Valerie G.
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