Copper surface passivation during semiconductor manufacturing

Details Copper surface passivation during semiconductor manufacturing Copper surface passivation during semiconductor manufacturing

2003-06-27

2004-08-31

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S631000, C438S633000, C438S687000, C438S691000, C438S692000, C438S694000, C438S695000, C438S768000, C438S906000, C438S958000

Reexamination Certificate

active

06784093

ABSTRACT:

FIELD OF THE INVENTION
This invention relates to the prevention of copper corrosion during the integrated circuit manufacturing process when copper is used as the interconnect material.


REFERENCES:
patent: 6656241 (2003-12-01), Hellring et al.
patent: 6723631 (2004-04-01), Noguchi et al.
patent: 2002/0042193 (2002-04-01), Noguchi et al.
patent: 2004/0067649 (2004-04-01), Hellring et al.
Paul E. Laibinis et al. “Self-Assembled Monolayers of n-Alkanethiiolates on Copper are Barrier Films That Protect the Metal Against Oxidation by Air” American Chemical Society 1992, pp. 9022-9028

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