Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1998-11-12
2000-11-21
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429811, 20429812, C23C 1434
Patent
active
061497762
ABSTRACT:
The present invention generally provides an apparatus and a method for physical vapor deposition of a metal onto a substrate comprising a physical vapor deposition chamber and a target disposed in an upper portion of the chamber. The target comprises a backing plate having a central portion and a flange portion attachable to the physical vapor deposition chamber, a sputterable portion extending from the central portion of the backing plate, and an annular ridge disposed on a surface of the flange portion. Preferably, the sputterable portion of the target includes a restriction side wall that restricts entry of plasma and back-scattered particles into the dark space gap between an upper shield and the target.
REFERENCES:
patent: 5316802 (1994-05-01), Ebe et al.
patent: 5403779 (1995-04-01), Joshi et al.
patent: 5538603 (1996-07-01), Guo
patent: 5658442 (1997-08-01), Van Gogh et al.
patent: 5935397 (1999-08-01), Masterson
DD 279369 abstract, May 1990.
Ding Peijun
Hashim Imran
Hong Richard
Tang Howard
Applied Materials Inc.
Nguyen Nam
Ver Steeg Steven H.
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