Copper interconnects

Details Copper interconnects Copper interconnects

2005-08-02

2005-08-02

VerSteeg, Steven (Department: 1753)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S192320, C204S192380, C204S298040, C204S298410, C204S298160, C204S298060, C204S298080

Reexamination Certificate

active

06923891

ABSTRACT:
A method for forming a conductive region on a first portion of a substrate, the method being constituted by exposing the first portion to a filtered beam of substantially fully ionised metallic ions under a pulsed, modulated electrical bias. The method uses FCVA (Filtered Cathodic Vacuum Arc) techniques to generate the filtered ion beam and permits the formation of a conformal metal coating, even in high aspect ratio visa and trenches. The method also permits the in-filling of vias and trenches to form conductive interconnects. Particular examples concern the deposition of copper ions. An adapted FCVA apparatus deposits metals on substrates. A control apparatus controls ion beams impacting upon substrates, the control apparatus being suitable for incorporation within existing filtered ion beam sources.

REFERENCES:
patent: 5851475 (1998-12-01), Komvopoulos et al.
patent: 6274492 (2001-08-01), Klimes et al.
patent: WO 96/26531 (1996-08-01), None

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