Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
2000-01-06
2000-12-12
Clark, Sheila V.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257765, 257750, H01L 2348
Patent
active
061603155
ABSTRACT:
A copper via structure formed when copper and a small amount of an alloying metal such as magnesium or aluminum are cosputtered onto a substrate having oxide on at least a portion of its surface. Either the wafer is held at an elevated temperature during deposition or the sputtered film is annealed without the wafer being exposed to ambient. Due to the high temperature, the alloying metal diffuses to the surface. If a surface is exposed to a low partial pressure of oxygen or contacts silicon dioxide, the magnesium or aluminum forms a thin stable oxide but also extends into the oxide a distance of about 100 nm. The alloying metal oxide having a thickness of about 6 nm on the oxide sidewalls encapsulates the copper layer to provide a barrier against copper migration, to form an adhesion layer over silicon dioxide, and to act as a seed layer for the later growth of copper, for example, by electroplating.
REFERENCES:
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 5436504 (1995-07-01), Chakravorty
patent: 5442235 (1995-08-01), Parrillo et al.
patent: 5592024 (1997-01-01), Aoyama et al.
patent: 5654232 (1997-08-01), Gardner
patent: 5744394 (1998-04-01), Iguchi et al.
patent: 5747360 (1998-05-01), Nulman
patent: 5770519 (1998-06-01), Klein et al.
patent: 6037257 (2000-03-01), Chiang et al.
patent: 6037664 (2000-03-01), Zhao et al.
Gutman et la., "Integration of copper multilevel interconnects with oxide and polymer interlevel dielectrics," Thin Solid Films, vol. 270, No. 1/2, Dec. 1995, pp. 472-479.
Murarka et al., "Copper interconnection schemes: Elimination of the need of diffusion barrier/adhesion promoter by the use of corrosion resistant, low resistivity doped copper," Microelectronics Technology and Process Integration, Austin TX, USA, Oct., 20-21, 1994, Proceedings of the SPIE--The International Society for Optical Engineering, vol. 2335, 1994, pp. 80-90.
Murarka et al., "Copper metalization for ULSI and beyond," Critical Reviews in Solid State and Material Science, vol. 10, No. 2, 1995, pp. 87-124.
Lanford et al., "Low temperature passivation of copper by doping with Al or Mg," Thin Solid Films, vol. 262, 1995, pp. 234-241.
Chiang Tony
Chin Barry
Ding Peijun
Hashim Imran
Sun Bingxi
Applied Materials Inc.
Clark Sheila V.
Guenzer Charles S.
LandOfFree
Copper alloy via structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Copper alloy via structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Copper alloy via structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-220833